unisonic technologies co., ltd PUMZ1 preliminary npn/pnp silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2010 unisonic technologies co., ltd qw-r218-011.a npn/pnp general purpose transistors ? description the utc PUMZ1 is a npn/pnp transistor, specially used in general purpose of switching and am plifying applications. thus, two npn/pnp transistors are operat ed independently in an sot-363 package. ? features * low current: 100ma (max.) * low voltage: 40v (max.) * less number of components and boardspace required * halogen free ? symbol ? ordering information ordering number package packing PUMZ1g-al6-r sot-363 tape reel ? marking
PUMZ1 preliminary npn/pnp silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r218-011.a ? pin configuration ? pin description pin no. pin name description 1,4 emitter tr2; tr1 2,5 base tr2; tr1 3,6 collector tr2; tr1
PUMZ1 preliminary npn/pnp silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r218-011.a ? absolute maximum ratings parameter symbol ratings unit per transistor; for the pnp transistor with negative polarity collector- base voltage v cbo 50 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 5 v collector current (dc) i c 100 ma peak collector current i cm 200 ma peak base current i bm 200 ma t a 25c 200 mw total power dissipation t a 25c (note2) p d 300 mw junction temperature t j 150 c storage temperature t stg -65 ~ +150 c ambient operating temperature t opr -65 ~ +150 c notes: 1. absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. device mounted on an fr4 printed-circuit board. ? thermal data parameter symbol ratings unit junction to ambient ja 416 k/w note: device mounted on an fr4 printed-circuit board. ? electrical characteristics (t a =25c unless otherwise specified.) parameter symbol test conditions min typ max unit per transistor; for the pnp transistor with negative polarity v cb =30v, i e =0 100 na collect cut-off current i cbo v cb =30v, i e =0, t j =150c 10 a emitter cut-off current i ebo v eb =4v, i c =0 100 na dc current gain h fe v ce =6v, i c =1ma 120 collector-emitter satura tion voltage(note) v ce(sat) i c =50ma, i b =5ma 200 mv tr1 1.5 pf collector capacitance tr2 c c i e =i e = 0; v cb =12v; f = 1mhz 2.2 pf transition frequency f t v ce =12v, i c =2ma, f =100mhz 100 mh z note 1. pulse test: t p 300 s; 0.02.
PUMZ1 preliminary npn/pnp silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r218-011.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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